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北京中泰达电子科技有限公司 
| 联系人：彭生 先生 (销售) |
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| 电 话：010-62669391 |
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| 手 机：15013819809 |
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| 供应S 频段应用的 GaN HEMT 产品CMPA2735075F |
CMPA2735075F 功率放大器
75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier
Cree’s CMPA2735075F is a gallium nitride (GaN) High Electron Mobility
Transistor (HEMT) based monolithic microwave integrated circuit
(MMIC). GaN has superior properties compared to silicon or gallium
arsenide, including higher breakdown voltage, higher saturated electron
drift velocity and higher thermal conductivity. GaN HEMTs also offer
greater power density and wider bandwidths compared to Si and GaAs
transistors. This MMIC contains a two-stage reactively matched amplifier
design approach enabling very wide bandwidths to be achieved. This
MMIC enables extremely wide bandwidths to be achieved in a small
footprint screw-down package.
主要参数：
• 27 dB Small Signal Gain
• 80 W Typical PSAT
• Operation up to 28 V
• High Breakdown Voltage
• High Temperature Operation
• 0.5” x 0.5” Total Product Size
产品应用：
Civil and Military Pulsed Radar
Amplifiers
Datasheet http://www.cree.com/~/media/Files/Cree/RF/Data%20Sheets/CMPA2735075F.pdf
CGH31240F
240 W, 2700-3100 MHz, 50-ohm Input/Output Matched, GaN HEMT for
S-Band Radar Systems
Datasheet http://www.cree.com/~/media/Files/Cree/RF/Data%20Sheets/CGH31240F.pdf
CGH35240F
240 W, 3100-3500 MHz, 50-ohm Input/Output Matched, GaN HEMT for
S-Band Radar Systems |
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